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In a previous work, contributors to Critical Dimension (CD) variability intra-field were shown to come from reticle, contrast fading coming from reticle M3D fading and scanner optics fading. In addition, intra-field best focus shifts (BF) were reported. It called for a holistic assessment and control of total CD uniformity (CDU). In this work we expand the experimental validation total CDU in two ways (1) we study the local reticle variations and its translation to wafer variability by adding Aerial Image Measurement System (AIMS) into the metrology loop (2) we investigate if the observed best focus differences have impact on the 3D aspects of the resist: resist profile and local CDU at bottom and top of contact hole were measured by Atomic Force Microscopy (AFM).
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Jo Finders, Vidya Vaenkatesan, Luc van Kessel, Ruben Maas, Tasja van Rhee, Varun Kakkar, Dominykas Gustas, Eelco van Setten, Claire van Lare, "Holistic assessment and control of total CDU ," Proc. SPIE 12953, Optical and EUV Nanolithography XXXVII, 1295303 (10 April 2024); https://doi.org/10.1117/12.3010890