Incorporating iodine into polypeptoid chemically-amplified resists for improved EUV sensitivity

Cameron P. Adams; Chenyun Yuan; Qi Zhang; Oleg Kostko; Christopher K. Ober; Rachel A. Segalman

doi:10.1117/12.3012454

10 April 2024 Incorporating iodine into polypeptoid chemically-amplified resists for improved EUV sensitivity

Cameron P. Adams, Chenyun Yuan, Qi Zhang, Oleg Kostko, Christopher K. Ober, Rachel A. Segalman

Proceedings Volume 12957, Advances in Patterning Materials and Processes XLI; 1295724 (2024) https://doi.org/10.1117/12.3012454
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Conference Poster

Abstract

As extreme ultraviolet lithography advances towards patterning smaller features, stochastics and sensitivity are two challenges that polymeric photoresists must overcome. Traditionally, synthetic limitations cause chain-to-chain variations in polymer molecular weight, composition, and sequence which are compounded by material stochastics in resist formulations. Together with poor EUV absorption by polymeric materials, this contributes to unacceptable levels of line-edge roughness and other patterning defects. Polypeptoids are a unique class of bio-inspired polymers that can be synthesized with a perfectly defined sequence, composition, and molecular weight, yielding a uniform material. In this study, we have incorporated metals and halogens into polypeptoid-based chemically amplified resists to investigate the impact of strongly EUV-absorbing elements on the sensitivity of polymeric photoresists. These polypeptoid CARs have been evaluated under DUV and electron-beam lithography.

Citation Download Citation

Cameron P. Adams, Chenyun Yuan, Qi Zhang, Oleg Kostko, Christopher K. Ober, and Rachel A. Segalman "Incorporating iodine into polypeptoid chemically-amplified resists for improved EUV sensitivity", Proc. SPIE 12957, Advances in Patterning Materials and Processes XLI, 1295724 (10 April 2024); https://doi.org/10.1117/12.3012454

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