Paper
18 December 2023 Composition disorder in InAs/InAsSb superlattice by STM
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Abstract
The interfacial asymmetry and compositional disorder caused by atomic segregation and exchange significantly affect the electrical properties of the InAs/InAsSb superlattice, leading to deviations from original designs. The study presents a quantitative analysis of the compositional asymmetry of the superlattice and its effects using a segregation model and 8-band k.p model. The composition disorder at each interface, primarily induced by Sb segregation, is examined through the reconstruction of the actual atomic sequence structure based on scanning tunneling microscopy results. Three different atomistic structures of the superlattice are modeled using the k.p method, including the ideal MBE-growth structure, a rebuilt structure with Sb segregation only at the InAs-on-InAsSb interface, and a rebuilt structure with Sb segregation at both interfaces. The results of the modeling highlight the significant influence of Sb segregation on the electronic properties of InAs/InAsSb superlattices.
(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Shengwen Xie, Lili Xie, Ruiqing Chai, Jiushuang Zhang, Qiyang Sun, Xu Zhang, Yao Yao, Ben Fan, Liqun Dai, Hongbo Bu, Ruimeng Zhang, and Ruiming Chen "Composition disorder in InAs/InAsSb superlattice by STM", Proc. SPIE 12963, AOPC 2023: Optical Sensing, Imaging, and Display Technology and Applications; and Biomedical Optics, 129630F (18 December 2023); https://doi.org/10.1117/12.3005383
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KEYWORDS
Antimony

Superlattices

Interfaces

Indium arsenide

Scanning tunneling microscopy

Data modeling

Electrical properties

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