Design of DC-18 GHz high-isolation and high-power SPDT

Wenbin Huang; Xiao Ma; Chengying Chen

doi:10.1117/12.3016676

15 January 2024 Design of DC-18 GHz high-isolation and high-power SPDT

Wenbin Huang, Xiao Ma, Chengying Chen

Proceedings Volume 12983, Second International Conference on Electrical, Electronics, and Information Engineering (EEIE 2023); 1298302 (2024) https://doi.org/10.1117/12.3016676
Event: Second International Conference on Electrical, Electronics, and Information Engineering (EEIE 2023), 2023, Wuhan, China

Abstract

A single blade double-throw (SPDT) switch for transceiver/receiver (T/R) module applications with wide band, high power, and high isolation is presented in this paper. The switch operates in the frequency range of DC-18GHz and is realized by series-shunt topology. To improve the power-handling capability, stacked FET transistors are used. An inductor is inserted into the internal shunt transistor to improve switch isolation and return loss performance within the operating frequency band. This SPDT is realized using 0.25-μmGaAs pHEMT technology, and its size is 0.94mm × 0.94mm. The electromagnetic (EM) simulation results indicated that the design offers a low insertion loss of 2.1dB and high isolation of 48.9dB. The input 1-dB power compression point (𝑃_1dB) is 32.4dBm @ 12GHz.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Wenbin Huang, Xiao Ma, and Chengying Chen "Design of DC-18 GHz high-isolation and high-power SPDT", Proc. SPIE 12983, Second International Conference on Electrical, Electronics, and Information Engineering (EEIE 2023), 1298302 (15 January 2024); https://doi.org/10.1117/12.3016676

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