10 June 2024Local (nanometric) quantification of the optical properties of SiO2 dielectric layers with scattering scanning nearfield optical microscope
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This project explores optical near-field characterizations using a scattering Scanning Nearfield Optical Microscope (s-SNOM) with a monochromatic visible illumination on SiO2 dielectric thin films, elaborated by electron beam deposition onto Silicon wafers. Although the amplitude and phase resulting from the optical near-field interaction are mostly used for qualitative characterizations, this work aims to achieve direct quantitative measurements of optically transparent components. In parallel, theoretical models of electric field and reflectivity variations in the propagative regime were employed, and the results were compared to the optical near-field signal variations. Insights on the properties of optical components that can be accurately measured with s-SNOM are thus provided.
Valentin Allard,Olivier Hector,Julien Lumeau,Antonin Moreau, andAude L. Lereu
"Local (nanometric) quantification of the optical properties of SiO2 dielectric layers with scattering scanning nearfield optical microscope", Proc. SPIE 12991, Nanophotonics X, 1299110 (10 June 2024); https://doi.org/10.1117/12.3017165
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