A recently, triple-band shortwave infrared-mid-wave infrared-long-wave infrared (SWIR-MWIR-LWIR) photodetector based on III-V material showed promising performance with successful separation of operation regimes. When the applied bias voltage changes, the device demonstrates consecutively the three different colors detection, corresponding to the different bandgaps of SWIR, MWIR and LWIR absorber regions. Nevertheless, the bias dependency for MWIR and especially for LWIR signals is still much of concern. The triple-band device reveals strong bias dependency for quantum efficiency (QE) for MWIR and LWIR response as well as high dark current value, which made the structure unsuitable for FPA imaging application. In this matter, to control the high bias dependency and dark current value observed in previous design, a new approach was chosen in design to enhance the performance of the triple-band device.
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