Paper
1 February 2024 Effect of sputtering power on the properties of Al-doped Ga2O3 thin films
Lei Zhang, Haofei Huang, Zhichao Qian, Mengqian Wang, Wei Zhang, Hongwei Li, Azhati Lina, Ke Tang, Linjun Wang, Jian Huang
Author Affiliations +
Proceedings Volume 13068, Fifth International Conference on Optoelectronic Science and Materials (ICOSM 2023); 130680L (2024) https://doi.org/10.1117/12.3016339
Event: Fifth International Conference on Optoelectronic Science and Materials (ICOSM 2023), 2023, Hefei, China
Abstract
In this work, Al-doped Ga2O3 thin films were prepared on quartz substrates using radio frequency magnetron co-sputtering, and the influence of Al2O3 sputtering power on properties of the films was investigated. It was found that the Al content in the films increased with the increase in sputtering power, reaching 30.63 at.% at a sputtering power of 100 W. All the films prepared exhibited highly transparent in the visible and near-ultraviolet regions (>85%). In comparison to undoped Ga2O3 films, Al-doped Ga2O3 films exhibit a pronounced blue shift in their absorption edges, with the degree of blue shift increasing as the sputtering power is raised.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Lei Zhang, Haofei Huang, Zhichao Qian, Mengqian Wang, Wei Zhang, Hongwei Li, Azhati Lina, Ke Tang, Linjun Wang, and Jian Huang "Effect of sputtering power on the properties of Al-doped Ga2O3 thin films", Proc. SPIE 13068, Fifth International Conference on Optoelectronic Science and Materials (ICOSM 2023), 130680L (1 February 2024); https://doi.org/10.1117/12.3016339
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KEYWORDS
Gallium

Aluminum

Sputter deposition

Thin films

Magnetrons

Absorption

Doping

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