Paper
1 February 2024 Design and simulation analysis of narrow bandgap single-junction GaAs-GaAsSb nanowire solar cell
Zhihong Zhang, Fengyuan Lin, Zhipeng Wei
Author Affiliations +
Proceedings Volume 13068, Fifth International Conference on Optoelectronic Science and Materials (ICOSM 2023); 1306816 (2024) https://doi.org/10.1117/12.3016237
Event: Fifth International Conference on Optoelectronic Science and Materials (ICOSM 2023), 2023, Hefei, China
Abstract
Solar cell efficiency improvement is a significant research focus. To enhance the separation and reduce the recombination of photogenerated carriers in narrow bandgap GaAs nanowire solar cells (NWSCs), we propose a GaAs-GaAs1-xSbx-GaAs heterostructure NWSCs model. Adjusting the Sb concentration in GaAs1-xSbx modifies the energy band structure, effectively separating photogenerated electron-hole pairs. Increasing Sb concentration significantly boosts short circuit current density and power conversion efficiency. At x = 0.34, we achieve a short circuit current density (Jsc) of 28.3 mA·cm-2, an open-circuit voltage (Voc) of 0.93 V, and a 23.1% power-conversion efficiency (PCE) under AM 1.5G spectrum. Then, the distribution of electrons and holes in the transport process of the whole NWSCs is simulated when the Sb concentration is set to 0.34, which confirms electron separation to n-type GaAs and hole separation to p-type GaAs at x = 0.34, effectively. Moreover, the device exhibits an external quantum efficiency (EQE) of 95.9%.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Zhihong Zhang, Fengyuan Lin, and Zhipeng Wei "Design and simulation analysis of narrow bandgap single-junction GaAs-GaAsSb nanowire solar cell", Proc. SPIE 13068, Fifth International Conference on Optoelectronic Science and Materials (ICOSM 2023), 1306816 (1 February 2024); https://doi.org/10.1117/12.3016237
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