Paper
1 February 2024 Interfacial passivation strategy enabled efficient perovskite quantum dot light-emitting diodes
Xuefei Li, Jinyang Zhao, Lixuan Chen, Xin Zhang, Yi Wei, Shengdong Zhang
Author Affiliations +
Proceedings Volume 13068, Fifth International Conference on Optoelectronic Science and Materials (ICOSM 2023); 130681X (2024) https://doi.org/10.1117/12.3016238
Event: Fifth International Conference on Optoelectronic Science and Materials (ICOSM 2023), 2023, Hefei, China
Abstract
Perovskite quantum dot light-emitting diodes (PeQLEDs) have emerged as a promising candidate for high-quality lighting and displays, where significant progress has been made in the modification and optimization of perovskite quantum dots (PeQDs) emitting layer to achieve improved device efficiency. However, limited attention has been given to interfacial trap state passivation for efficient and stable PeQLEDs thus far. We propose a straightforward approach to enhance the performance of PeQLEDs by thermal-evaporating a phosphine oxide molecule, SPPO13, onto the PeQDs emitting layer as an interface passivation layer. The interfacial passivation leads to a significant improvement in both maximum brightness and maximum external quantum efficiency (EQE) of PeQLEDs, reaching 28907.1 cd m-2 and 10.3%, respectively. This enhancement is attributed to reduced trap-assisted recombination and improved electron transport characteristics.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Xuefei Li, Jinyang Zhao, Lixuan Chen, Xin Zhang, Yi Wei, and Shengdong Zhang "Interfacial passivation strategy enabled efficient perovskite quantum dot light-emitting diodes", Proc. SPIE 13068, Fifth International Conference on Optoelectronic Science and Materials (ICOSM 2023), 130681X (1 February 2024); https://doi.org/10.1117/12.3016238
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KEYWORDS
Interfaces

Passivation

Perovskite

External quantum efficiency

Electron transport

Quantum dot light emitters

Quantum enhancement

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