Presentation
29 May 2024 A bias-switchable narrowband/broadband NIR organic photodetector fabricated using a scalable technique
Wei-Hsiang Lin, Lai-Hung Lai, Hsuan-Chun Chang, Chin-Chuan Hsieh, Maria Antonietta Loi
Author Affiliations +
Abstract
This paper presents a groundbreaking development in the field of organic photodetectors, introducing a novel dual-mode photodetector with exceptional thickness capabilities. The technology is achieved through the innovative use of multilayer blade coating techniques, enabling the seamless transition between narrowband and broadband modes through the application of bias. This pioneering device, termed the "Bias Switchable Narrowband-Broadband Near-Infrared (NIR) Organic Photodetector," is manufactured in ambient conditions and offers several distinct advantages, including dual-mode operation, halogen-free solvent usage, ambient fabrication conditions, and scalability in the manufacturing process.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei-Hsiang Lin, Lai-Hung Lai, Hsuan-Chun Chang, Chin-Chuan Hsieh, and Maria Antonietta Loi "A bias-switchable narrowband/broadband NIR organic photodetector fabricated using a scalable technique", Proc. SPIE 13083, SPIE Future Sensing Technologies 2024, 130830Y (29 May 2024); https://doi.org/10.1117/12.3014254
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KEYWORDS
Fabrication

Near infrared

Organic photodetectors

Image sensors

Infrared technology

Organic semiconductors

Short wave infrared radiation

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