Photoluminescence properties of gold nanostructured transition metal dichalcogenide heteronanostructures and their carrier dynamics

Kosei Ueno

doi:10.1117/12.3027911

4 October 2024 Photoluminescence properties of gold nanostructured transition metal dichalcogenide heteronanostructures and their carrier dynamics

Kosei Ueno

Author Affiliations +

Proceedings Volume 13117, Enhanced Spectroscopies and Nanoimaging 2024; 131170U (2024) https://doi.org/10.1117/12.3027911
Event: Nanoscience + Engineering, 2024, San Diego, California, United States

Abstract

Transition metal dichalcogenides (TMDs), which are layered compounds, have attracted attention as next-generation semiconductor materials due to their direct bandgap and photoluminescent properties when in monolayer form. In particular, the heterostructures of p-type semiconductor WSe2 and n-type semiconductor MoS2 exhibit Type II band offsets, leading to superior charge separation efficiency, thus offering potential applications in optoelectronic and light-emitting devices. However, their thin layers result in low light absorption efficiency and relatively low photoluminescence quantum yields, posing challenges for device construction utilizing TMD heterostructures. Enhancement of light absorption efficiency and quantum yield improvement can be achieved through electromagnetic field enhancement by localized surface plasmon resonances. This study elucidated carrier dynamics through time-resolved measurements to reveal the details of charge separation induced in TMD heterostructures and to investigate the impact of plasmon resonance on charge recombination rates and photoluminescence intensity.

Conference Presentation

Citation Download Citation

Kosei Ueno "Photoluminescence properties of gold nanostructured transition metal dichalcogenide heteronanostructures and their carrier dynamics", Proc. SPIE 13117, Enhanced Spectroscopies and Nanoimaging 2024, 131170U (4 October 2024); https://doi.org/10.1117/12.3027911

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