Modeling and testing of high-temperature 4H-SiC Schottky diode radiation detectors using thermionic and field emission models

Jarod Remy; Daryl Giglio; Praneeth Kandlakunta; Lei R. Cao

doi:10.1117/12.3028507

9 October 2024 Modeling and testing of high-temperature 4H-SiC Schottky diode radiation detectors using thermionic and field emission models

Jarod Remy, Daryl Giglio, Praneeth Kandlakunta, Lei R. Cao

Author Affiliations +

Proceedings Volume 13151, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXVI; 131510F (2024) https://doi.org/10.1117/12.3028507
Event: Optical Engineering + Applications, 2024, San Diego, California, United States

Abstract

Silicon carbide (SiC), particularly the 4H-SiC polytype, is a maturing wide bandgap semiconductor that has been shown to be an optimal material for high performance electronics in extreme environments. Conventional semiconductor radiation detectors have been shown to have limited performance above room temperature, with loss of sensitivity and degradation of detector resolution due to increase in electronic noise. The wide bandgap (3.27eV) of 4H-SiC and the variable active region of Schottky barrier diodes produce a device capable of maintaining a lower-level of electronic noise, even at elevated temperature. We fabricated 4H-SiC Schottky barrier diodes and evaluated their electrical parameters using current-voltage (I-V) and capacitance-voltage (C-V) measurements. The I-V and C-V measurements were performed at elevated temperatures up to 500 °C at 100 °C increments. Electrical performance was also measured at room temperature following each thermal cycle. Energy spectroscopy performance of the devices was also measured following each thermal cycle. Detector characteristics such as resolution and peak channel were compared following thermal cycles. However, at low temperatures, the TFE model does not match well with our experimental results. A model where the TFE current and the reverse saturation current (FE model) at room temperature is proposed, and proved a good fit with experimental data from room temperature to 500 C when high bais is applied.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Jarod Remy, Daryl Giglio, Praneeth Kandlakunta, and Lei R. Cao "Modeling and testing of high-temperature 4H-SiC Schottky diode radiation detectors using thermionic and field emission models", Proc. SPIE 13151, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXVI, 131510F (9 October 2024); https://doi.org/10.1117/12.3028507

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available