Defect characterization by electron paramagnetic resonance in 4H-SiC irradiated by low fluence rate alpha particles

Daryl Giglio; Jarod Remy; Luke C. Lewis; Praneeth Kandlakunta; Lei R. Cao

doi:10.1117/12.3028526

9 October 2024 Defect characterization by electron paramagnetic resonance in 4H-SiC irradiated by low fluence rate alpha particles

Daryl Giglio, Jarod Remy, Luke C. Lewis, Praneeth Kandlakunta, Lei R. Cao

Author Affiliations +

Proceedings Volume 13151, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXVI; 131510G (2024) https://doi.org/10.1117/12.3028526
Event: Optical Engineering + Applications, 2024, San Diego, California, United States

Abstract

While defects are known to inhibit device level performance, research shows specific spin defects resulting from silicon vacancy, carbon vacancy, or divacancy in SiC are alternative platforms to NV center in diamond for quantum sensing. Multiple 4H-SiC Schottky barrier diodes (SBD) were in-house fabricated and irradiated with ²⁴¹Am alpha particles to a total accumulated fluence between 1×10¹³-1×10¹⁴ cm^-2 over about 2-years low dose irradiation at room temperature. These irradiated devices, after annealing, were electrically characterized using I/V and C-V measurements and electron paramagnetic resonance (EPR) spectroscopy for the concentration of electronic active traps, atomic and electronic structure. The EPR spectroscopy shows that alpha irradiation induces changes in the properties of paramagnetic sites in 4H-SiC. Differences include increased line width and distorted line shape in irradiated samples, suggesting changes in relaxation behavior. Slight differences in g-values suggest possible changes in the paramagnetic sites due to irradiation. The temperature dependence studies conducted on vacancy sites, however, is inconclusive in identifying carbon and silicon vacancies or nitrogen donors in 4H-SiC, due to signal saturation at temperatures below 100 K.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Daryl Giglio, Jarod Remy, Luke C. Lewis, Praneeth Kandlakunta, and Lei R. Cao "Defect characterization by electron paramagnetic resonance in 4H-SiC irradiated by low fluence rate alpha particles", Proc. SPIE 13151, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXVI, 131510G (9 October 2024); https://doi.org/10.1117/12.3028526

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