Research and development of the EUV-FEL light source for lithography

Norio Nakamura; Ryukou Kato; Hiroshi Sakai; Kimichika Tsuchiya; Yoshinori Tanimoto; Yosuke Honda; Miho Shimada; Masahiro Yamamoto; Takanori Tanikawa; Olga Tanaka; Takashi Obina; Shinichiro Michizono; Hiroshi Kawata

doi:10.1117/12.3033966

26 August 2024 Research and development of the EUV-FEL light source for lithography

Norio Nakamura, Ryukou Kato, Hiroshi Sakai, Kimichika Tsuchiya, Yoshinori Tanimoto, Yosuke Honda, Miho Shimada, Masahiro Yamamoto, Takanori Tanikawa, Olga Tanaka, Takashi Obina, Shinichiro Michizono, Hiroshi Kawata

Author Affiliations +

Proceedings Volume 13177, Photomask Japan 2024: XXX Symposium on Photomask and Next-Generation Lithography Mask Technology; 131770L (2024) https://doi.org/10.1117/12.3033966
Event: Photomask Japan 2024, 2024, Yokohama, Japan

Abstract

Research and development of a high-power EUV light source are very important in EUV lithography to overcome the stochastic effects for a higher throughput and finer patterning in future. We have designed and studied a high-power EUV free-electron laser (FEL) based on energy-recovery linac (ERL) for future lithography. The EUV-FEL light source has many advantages such as extremely high EUV power without tin debris, narrow spectral bandwidth, upgradability to a Beyond EUV (BEUV) FEL, polarization controllability for high-NA lithography, low power consumption and low construction and running costs per scanner, as compared to the laser-produced plasma (LPP) source used for the present EUV lithography exposure tool. Demonstration of proof of concept (PoC) of the EUV-FEL has made progress using the IR-FEL in the Compact ERL (cERL) at High Energy Accelerator Research Organization (KEK). We also show future plans of remaining R&D items such as a main-linac cavity system with lower power consumption, improvements of the electron gun system for stable operation of 10-mA beam current and a compact variably-polarizing undulator with a lower cost to realize the EUV-FEL light source. After these R&Ds, we can start to build a prototype EUV-FEL smoothly and quickly.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Norio Nakamura, Ryukou Kato, Hiroshi Sakai, Kimichika Tsuchiya, Yoshinori Tanimoto, Yosuke Honda, Miho Shimada, Masahiro Yamamoto, Takanori Tanikawa, Olga Tanaka, Takashi Obina, Shinichiro Michizono, and Hiroshi Kawata "Research and development of the EUV-FEL light source for lithography", Proc. SPIE 13177, Photomask Japan 2024: XXX Symposium on Photomask and Next-Generation Lithography Mask Technology, 131770L (26 August 2024); https://doi.org/10.1117/12.3033966

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