Molecular dynamics simulation of SiC oxide layer mechanical polishing

Xincheng Yin; Yuhang Zhou; Haiwang Liu; Youliang Wang; Shujuan Li

doi:10.1117/12.3038319

5 August 2024 Molecular dynamics simulation of SiC oxide layer mechanical polishing

Xincheng Yin, Yuhang Zhou, Haiwang Liu, Youliang Wang, Shujuan Li

Proceedings Volume 13226, Third International Conference on Advanced Manufacturing Technology and Manufacturing Systems (ICAMTMS 2024); 132263W (2024) https://doi.org/10.1117/12.3038319
Event: 3rd International Conference on Advanced Manufacturing Technology and Manufacturing Systems (ICAMTMS 2024), 2024, Changsha, China

Abstract

SiC single crystal is a typical difficult-to-process material with high brittleness and high hardness, SiO₂ oxide layer with lower hardness is formed on SiC surface by plasma electrochemical reaction, and then it is mechanically removed by abrasive with lower hardness to obtain lower surface roughness. Through the molecular dynamics simulation of mechanochemical action and microscopic removal of SiC oxide layer by mechanical polishing, the microscopic processes such as contact deformation, atomic scraping, friction change and temperature change between a single CeO₂ abrasive particle and SiO₂ oxide layer are studied. The indentation and scratching effects of abrasive particles on the oxide layer at different times are revealed from the atomic scale, and the microscopic removal mechanism of SiC oxide layer during mechanical polishing is explained. The research results enhance the understanding of microscopic removal of the SiO₂ oxide layer by CeO₂ abrasive particles, which provides a theoretical basis for the optimization of processing parameters for SiC oxide layer removal.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Xincheng Yin, Yuhang Zhou, Haiwang Liu, Youliang Wang, and Shujuan Li "Molecular dynamics simulation of SiC oxide layer mechanical polishing", Proc. SPIE 13226, Third International Conference on Advanced Manufacturing Technology and Manufacturing Systems (ICAMTMS 2024), 132263W (5 August 2024); https://doi.org/10.1117/12.3038319

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KEYWORDS

Oxides

Abrasives

Particles

Chemical species

Silicon carbide

Polishing

Surface finishing

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