Optical and electrical properties of transition metal nitride films produced by reactive cathodic arc deposition and reactive rf sputtering

Paul Kraatz; F. Russell Nakatsukasa; John W. Stephenson

doi:10.1117/12.22372

1 December 1990 Optical and electrical properties of transition metal nitride films produced by reactive cathodic arc deposition and reactive rf sputtering

Paul Kraatz, F. Russell Nakatsukasa, John W. Stephenson

Author Affiliations +

Proceedings Volume 1323, Optical Thin Films III: New Developments; (1990) https://doi.org/10.1117/12.22372
Event: 34th Annual International Technical Symposium on Optical and Optoelectronic Applied Science and Engineering, 1990, San Diego, CA, United States

Abstract

Thin films of titanium, zirconium, and hafnium nitride have been fabricated by reactive cathodic arc deposition from elemental targets in a nitrogen ambient. The optical constants n and k of these films have been measured ellipsometrically from 0.40 to 0.70 m. Refiectances have been measured from 0.40 to 16 jim. Electrical properties have been evaluated using sheet resistance and Hall mobility measurements. Values for cathodic arc TiN films are compared with data for TiN films fabricated by reactive RF bias sputtering from a titanium target in an argon/nitrogen medium. Measured film properties are correlated with deposition parameters and qualitative studies of microstructure and surface topography.

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Paul Kraatz, F. Russell Nakatsukasa, and John W. Stephenson "Optical and electrical properties of transition metal nitride films produced by reactive cathodic arc deposition and reactive rf sputtering", Proc. SPIE 1323, Optical Thin Films III: New Developments, (1 December 1990); https://doi.org/10.1117/12.22372

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