Layout curvilinear representations impact on High-NA masks: a comparative study

Benjamin Venitucci; Jean-François Bougron; Nivea Schuch; Frederic Robert; Thiago Figueiro

doi:10.1117/12.3030112

18 September 2024 Layout curvilinear representations impact on High-NA masks: a comparative study

Benjamin Venitucci, Jean-François Bougron, Nivea Schuch, Frederic Robert, Thiago Figueiro

Author Affiliations +

Proceedings Volume 13273, 39th European Mask and Lithography Conference (EMLC 2024); 132731H (2024) https://doi.org/10.1117/12.3030112
Event: 39th European Mask and Lithography Conference (EMLC 2024), 2024, Grenoble, France

Abstract

OPC (Optical Proximity Correction) technology has been evolving to assist on the continues improvement of pattern resolution. One approach for further extending lithography resolution is ILT (Inverse Lithography Technology). This technology, based on applying an inverse model to the target design, creates curves from the design layouts. The adoption of ILT is now enabled by the improvement of runtime obtained by enhancements in algorithms and computing power as well as the new generation of mask writers (multibeam) which enables writing complex features in an acceptable time. The last blocking points were the data volume required to store, and the challenge of handling complex structures. If the standard data storage is used, curvilinear shapes are stored as polygons, which produces larger file sizes. The file size issue has been identified and addressed by the industry in recent years. File formats proposing compact ways to represent curves usually propose Implicit Bézier and B-Spline as main curve representations. The recent development of High-NA lithography requires anisotropic scaling of the patterns for writing on mask (4x, 8x). This adds another challenge to the data preparation flow to maintain the benefits of the proposed curve representations. This work assesses the impact of adoption of curvilinear representations, with the spotlight on the needs for High-NA mask data preparation.

Citation Download Citation

Benjamin Venitucci, Jean-François Bougron, Nivea Schuch, Frederic Robert, and Thiago Figueiro "Layout curvilinear representations impact on High-NA masks: a comparative study", Proc. SPIE 13273, 39th European Mask and Lithography Conference (EMLC 2024), 132731H (18 September 2024); https://doi.org/10.1117/12.3030112

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KEYWORDS

Photomasks

Lithography

Design

Optical proximity correction

Data conversion

Standards development

Extreme ultraviolet lithography

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