Paper
4 December 2024 High output InGaN red laser diodes through implementation of AlGaInN interlayer
Laraib Mustafa, Muhammad Usman, Shazma Ali, Anum Ali, Jamshad Bashir, Wagma Hidayat, Syeda Wajeeha Shakir, Iqra Anjum
Author Affiliations +
Proceedings Volume 13440, Fourth iiScience International Conference 2024: Recent Advances in Photonics and Physical Sciences; 1344005 (2024) https://doi.org/10.1117/12.3052373
Event: Fourth iiScience International Conference 2024: Recent Advances in Photonics and Physical Sciences, 2024, Lahore, Pakistan
Abstract
We examined the effect of AlGaInN interlayer on the performance of red InGaN laser diodes through numerical simulations. The findings indicate a significant rise in output power from 146 mW to 170 mW as well as an improvement in slope efficiency from 0.23 W/A to 0.52 W/A. Additionally, the proposed device exhibits improved gain and radiative current density.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Laraib Mustafa, Muhammad Usman, Shazma Ali, Anum Ali, Jamshad Bashir, Wagma Hidayat, Syeda Wajeeha Shakir, and Iqra Anjum "High output InGaN red laser diodes through implementation of AlGaInN interlayer", Proc. SPIE 13440, Fourth iiScience International Conference 2024: Recent Advances in Photonics and Physical Sciences, 1344005 (4 December 2024); https://doi.org/10.1117/12.3052373
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KEYWORDS
Indium gallium nitride

Diodes

Red lasers

Quantum wells

Aluminum

Doping

Indium

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