E-beam lithography fabricated optical 90-degree hybrid on InP platform

Mingming Pan; Bing Wang

doi:10.1117/12.3046432

13 December 2024 E-beam lithography fabricated optical 90-degree hybrid on InP platform

Mingming Pan, Bing Wang

Author Affiliations +

Proceedings Volume 13499, AOPC 2024: Optical Devices and Integration; 134990H (2024) https://doi.org/10.1117/12.3046432
Event: Applied Optics and Photonics China 2024 (AOPC2024), 2024, Beijing, China

Abstract

Integrated optical 90-degree hybrid has the advantages of compact structure and stable performance, which has been implemented on different integrated platforms, including silicon-on-insulator, silicon nitride, InP, and so on. InP is a promising platform for photonic integrated circuits (PIC) with both passive and active devices. Here, we simulated, fabricated, and demonstrated an InP optical 90-degree hybrid using a 4×4 multimode interference coupler. The designed device exhibits a phase error within ±5° in a spectral range from 1540 nm to 1565 nm, a common mode rejection ratio better than 19.6 dB, and an imbalance less than 0.91 dB in a spectral range from 1545 nm to 1560 nm experimentally. Performance improvement is on the way by optimizing the fabrication process.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Mingming Pan and Bing Wang "E-beam lithography fabricated optical 90-degree hybrid on InP platform", Proc. SPIE 13499, AOPC 2024: Optical Devices and Integration, 134990H (13 December 2024); https://doi.org/10.1117/12.3046432

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KEYWORDS

Hybrid optics

Waveguides

Electron beam lithography

Free space optics

Fabrication

Integrated optics

Optical design

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