Study of structural imperfections in epitaxial beta-SiC layers by method of x-ray differential diffractometry

Igor M. Baranov; R. N. Kutt; Irina P. Nikitina

doi:10.1117/12.24350

1 March 1991 Study of structural imperfections in epitaxial beta-SiC layers by method of x-ray differential diffractometry

Igor M. Baranov, R. N. Kutt, Irina P. Nikitina

Author Affiliations +

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24350
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

The electrically excited cyclotron resonance (CR) emission is investigated for the 2-dimensional electron gas in AlGaAs/GaAs heterostructures. The effect of sample inhomogeneities and impurities has been investigated by degrading samples by e-beam irradiation and by growing samples with an impurity scattering layer close to the interface. The CR absorption has been studied for comparison. A good correspondance of the two methods has been found: peak shifts are exactly reproduced and Landau level filling factor dependent linewidth oscillations occur in both cases. However, the absolute value and the oscillation amplitude of the linewidth are larger for the emission. This effect is explained by electrical heating and the magnetic field dependent current distribution, and forms a strong limitation for such current driven CR emission sources.

Citation Download Citation

Igor M. Baranov, R. N. Kutt, and Irina P. Nikitina "Study of structural imperfections in epitaxial beta-SiC layers by method of x-ray differential diffractometry", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24350

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