Asymmetric superlattices for microwave detection

Richard T. Syme; Michael Joseph Kelly; Angus Condie; Ian Dale

doi:10.1117/12.24559

1 February 1991 Asymmetric superlattices for microwave detection

Richard T. Syme, Michael Joseph Kelly, Angus Condie, Ian Dale

Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24559
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

The development and testing of resonant tunneling diodes with asymmetric current-voltage characteristics is described emphasizing their use as video detectors in the X-band. The I-V characteristics of a five-barrier ''graded-parameter superlattice'' structure are simulated showing a distinct asymmetry. The growth of two wafers by molecular-beam epitaxy is described in which n(+)GaAs substrates are used. The current-voltage characteristics show a significant asymmetry between forward and reverse bias, and the experimental and simulated results show discrepancies that are attributed to tunneling via the X-point. The superlattice diodes show good microwave behavior and dynamic ranges with temperature stability away from the negative differential regions that are comparable to those in Ge back diodes and better than that for Schottky diodes and pdb diodes.

Citation Download Citation

Richard T. Syme, Michael Joseph Kelly, Angus Condie, and Ian Dale "Asymmetric superlattices for microwave detection", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24559

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