Microwave interferometric measurements of process plasma density

Chun-Wah Cheah; Joseph L. Cecchi; J. L. Stevens

doi:10.1117/12.48941

1 March 1991 Microwave interferometric measurements of process plasma density

Chun-Wah Cheah, Joseph L. Cecchi, J. L. Stevens

Proceedings Volume 1392, Advanced Techniques for Integrated Circuit Processing; (1991) https://doi.org/10.1117/12.48941
Event: Processing Integration, 1990, Santa Clara, CA, United States

Abstract

The electron density of a plasma is an important parameter because it governs the rate of production of reactive species and ions. Overall reaction rates in deposition and etching processes depend on the electron density. Microwave interferometry is a rapid and relatively nonperturbing diagnostic method for the measurement of a line-averaged electron density. The practical aspects of microwave interferometry are examined here. Bench top studies of the simulated plasma environment are described addressing the questions of electrode multipassing wall reflection and plasma gradients. Finally actual electron density data taken in a 13. 56 MHz planar -diode reactor for Ar SF6 and Ar + 02 plasma are presented. It was determined that the plasma densities fall in the range of 10 8to 10 cm3 with the Ar plasma being at least an order of magnitude denser than SF6 for the same pressures and powers.

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Chun-Wah Cheah, Joseph L. Cecchi, and J. L. Stevens "Microwave interferometric measurements of process plasma density", Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); https://doi.org/10.1117/12.48941

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