Paper
1 March 1991 Pulsed-laser deposition of YBa2Cu3O7-x thin films: processing, properties, and performance
Ross E. Muenchausen, Stephen R. Foltyn, Xin Di Wu, Robert C. Dye, Nicholas S. Nogar, A. H. Carim, F. Heidelbach, D. Wayne Cooke, Robert C. Taber, Rod K. Quinn
Author Affiliations +
Abstract
One and two inch diameter wafers of (100) LaAlO3 have been coated with thin films of YBa2Cu3O7_ by a pulsed laser deposition technique. Deposition parameters have been optimized to produce uniform, 90 K films which have surface resistance values between 0.4 and 0.8 mμ at 4 K and 22 GHz.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ross E. Muenchausen, Stephen R. Foltyn, Xin Di Wu, Robert C. Dye, Nicholas S. Nogar, A. H. Carim, F. Heidelbach, D. Wayne Cooke, Robert C. Taber, and Rod K. Quinn "Pulsed-laser deposition of YBa2Cu3O7-x thin films: processing, properties, and performance", Proc. SPIE 1394, Progress In High-Temperature Superconducting Transistors and Other Devices, (1 March 1991); https://doi.org/10.1117/12.25751
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Cited by 2 scholarly publications.
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KEYWORDS
Temperature metrology

Thin films

Coating

Pulsed laser deposition

Resistance

Microwave radiation

Thin film deposition

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