Heat capacity of MOS field-effect devices of optical materials in the presence of a strong magnetic field

Kamakhya Prasad Ghatak; Shambhu Nath Biswas

doi:10.1117/12.46534

1 September 1991 Heat capacity of MOS field-effect devices of optical materials in the presence of a strong magnetic field

Kamakhya Prasad Ghatak, Shambhu Nath Biswas

Author Affiliations +

Proceedings Volume 1485, Reflective and Refractive Optical Materials for Earth and Space Applications; (1991) https://doi.org/10.1117/12.46534
Event: Orlando '91, 1991, Orlando, FL, United States

Abstract

In this paper, an attempt is made to study the heat capacity of MOS field-effect devices of optical materials under strong magnetic field using ternary compounds and nonlinear optical samples as examples of optical materials. The magneto-heat capacity of ternary materials is formulated in MOSFET by considering the fourth order in effective mass theory and taking into account the inter-actions of the conduction, heavy-hole, light-hole, and the split-off bands, respectively. The same capacity in nonlinear optical materials has also been formulated for the present case on the basis of newly-derived, generalized, 2-D carrier energy spectra by incorporating the anisotropic crystal potential and the Hamiltonian together with the anisotropies of the effective electron mass and the spin-orbit splitting parameter of the valence band for both the weak and strong electric field limits. The authors studied the surface electric field and the magnetic field dependences of the magneto heat capacity in n-channel inversion layers of the said materials taking n-Hg1-XCdXTe and CdGeAs2 as examples for both the limits. It is found that the magneto-heat capacity increases with magnetic field and surface field for both the limits in various types of oscillatory manners for all the cases. The theoretical results are in quantitative agreement with the experimental observation as reported elsewhere. In addition, the corresponding results of the magneto heat capacity for relatively wide-gap optical materials have been obtained from generalized expressions under certain limiting conditions.

Citation Download Citation

Kamakhya Prasad Ghatak and Shambhu Nath Biswas "Heat capacity of MOS field-effect devices of optical materials in the presence of a strong magnetic field", Proc. SPIE 1485, Reflective and Refractive Optical Materials for Earth and Space Applications, (1 September 1991); https://doi.org/10.1117/12.46534

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available