KTP waveguides for frequency upconversion of strained-layer InGaAs laser diodes

William P. Risk; Ch. K. Nadler

doi:10.1117/12.50760

1 December 1991 KTP waveguides for frequency upconversion of strained-layer InGaAs laser diodes

William P. Risk, Ch. K. Nadler

Proceedings Volume 1561, Inorganic Crystals for Optics, Electro-Optics, and Frequency Conversion; (1991) https://doi.org/10.1117/12.50760
Event: San Diego, '91, 1991, San Diego, CA, United States

Abstract

KTP waveguides are being investigated for frequency upconversion of strained-layer InGaAs lasers in the 900 - 1100 nm range. Phasematching for the lowest-order mode interaction can be obtained using the modal dispersion properties of these diffused waveguides and modeling calculations have been used to determine the waveguide parameters required for phasematching to occur at a particular wavelength. Ion-exchange in pure RbNO3 has been used to form a waveguide that permits phasematched frequency doubling at wavelengths near 1040 nm.

Citation Download Citation

William P. Risk and Ch. K. Nadler "KTP waveguides for frequency upconversion of strained-layer InGaAs laser diodes", Proc. SPIE 1561, Inorganic Crystals for Optics, Electro-Optics, and Frequency Conversion, (1 December 1991); https://doi.org/10.1117/12.50760

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