Time of energy relaxation of carriers in H--band

A. I. Demin

doi:10.1117/12.2297797

1 October 1991 Time of energy relaxation of carriers in H^--band

A. I. Demin

Proceedings Volume 1576, 16th International Conference on Infrared and Millimeter Waves; 15762C (1991) https://doi.org/10.1117/12.2297797
Event: 16th International Conference on Infrared and Millimeter Waves, 1991, Lausanne, Switzerland

Abstract

Investigation of Impurity conduction band which formed as a result of interaction of two electron (H^--like) impurity states presents a great interest both for physics of irregular systems and for physics of semiconductors. Detailed investigation of the process of the formation of H^--band were carried out in [1,2]. However up to now there are not numerous experimental works on H^--band because it is rather difficult to separate the conduction on H^--band from the other types of conduction.

Citation Download Citation

A. I. Demin "Time of energy relaxation of carriers in H^--band", Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 15762C (1 October 1991); https://doi.org/10.1117/12.2297797

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