Paper
1 December 1991 Dynamics of the optical parameters of molten silicon during nanosecond laser annealing
Johannes Boneberg, Oguz Yavas, B. Mierswa, Paul Leiderer
Author Affiliations +
Proceedings Volume 1598, Lasers in Microelectronic Manufacturing; (1991) https://doi.org/10.1117/12.51028
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States
Abstract
The behavior of the reflectivity of a Si single crystal during irradiation with two successive Nd:YAG pulses is investigated with ns resolution. The first pulse melts the surface, and therefore the reflection coefficient increases to the value of the metallic liquid at the melting temperature. Upon further heating of the surface with the second pulse, we observe a decrease of the reflection coefficient, resulting from the temperature dependent dielectric function of the molten Si. The largest decrease in the reflectivity that could be reached before damaging the surface amounted to 9% for both wavelengths 633 nm and 488 nm.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Johannes Boneberg, Oguz Yavas, B. Mierswa, and Paul Leiderer "Dynamics of the optical parameters of molten silicon during nanosecond laser annealing", Proc. SPIE 1598, Lasers in Microelectronic Manufacturing, (1 December 1991); https://doi.org/10.1117/12.51028
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Reflectivity

Silicon

Liquids

Reflection

Annealing

Temperature metrology

Nd:YAG lasers

RELATED CONTENT

Laser annealing of MBE Ge films on the Si substrates
Proceedings of SPIE (June 26 2001)
Laser annealing of thin semiconductor films
Proceedings of SPIE (December 12 1994)
Dynamics Of Laser Annealing
Proceedings of SPIE (January 24 1980)

Back to Top