Paper
1 December 1991 Stoichiometry of laser-deposited Bi-Sr-Ca-Cu-O films on silicon and mass spectrometric investigations of superconductors
J. Sabine Becker, Michael Lorenz, H.-J. Dietze
Author Affiliations +
Proceedings Volume 1598, Lasers in Microelectronic Manufacturing; (1991) https://doi.org/10.1117/12.51044
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States
Abstract
High-Ta superconducting Bi-Sr-Ca-Cu-O films on single crystal silicon substrates were prepared by laser induced plasma deposition. The stoichiometric change of cation concentrations of sintered target material to the thin film using a Nd-YAG and an excimer laser for the deposition is compared. Laser ionization and spark source mass spectrometry (SSMS and LIMS) were applied for the trace and cluster analysis of YBa2Cu3O and Bi-Sr-Ca-Cu-O ceramics.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Sabine Becker, Michael Lorenz, and H.-J. Dietze "Stoichiometry of laser-deposited Bi-Sr-Ca-Cu-O films on silicon and mass spectrometric investigations of superconductors", Proc. SPIE 1598, Lasers in Microelectronic Manufacturing, (1 December 1991); https://doi.org/10.1117/12.51044
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KEYWORDS
Superconductors

Thin films

Ions

Plasma

Chemical elements

Excimer lasers

Silicon films

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