Paper
1 June 1992 Quarter-micron KrF excimer laser lithography with a chemically amplifying negative resist
Akira Oikawa, Shuichi Miyata, Kimihisa Maeda, Hiroyuki Tanaka, Kenji Nakagawa
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Abstract
We have developed X123, a chemically amplifying negative resist, for KrF excimer-laser lithography. X123 mainly consists of a highly transparent polyvinylphenol derivative, purified hexamethoxymethylmelamine, and a photo acid generator. Resist performance was improved by refinement of chemicals, a quantitative study of the components, and a study of processing conditions. The resolution of X123 is 0.25 micrometers under optimized processing conditions without phase shift masks. Its depth-of-focus is 1.0 micrometers for 0.30 micrometers line-and-space (L&S) patterns and 1.5 micrometers for 0.35 micrometers L&S patterns. Other process latitudes are also wide. X123 shows promise for future device fabrication.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akira Oikawa, Shuichi Miyata, Kimihisa Maeda, Hiroyuki Tanaka, and Kenji Nakagawa "Quarter-micron KrF excimer laser lithography with a chemically amplifying negative resist", Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); https://doi.org/10.1117/12.59756
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Cited by 1 scholarly publication.
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KEYWORDS
Lithography

Excimer lasers

Polymers

Phase shifts

Absorption

Photomasks

Ultraviolet radiation

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