X-band "peeled" HEMT amplifier

Paul G. Young; Robert R. Romanofsky; Samuel A. Alterovitz; Edwyn D. Smith

doi:10.1117/12.137719

3 September 1992 X-band "peeled" HEMT amplifier

Paul G. Young, Robert R. Romanofsky, Samuel A. Alterovitz, Edwyn D. Smith

Proceedings Volume 1680, High-Speed Electronics and Optoelectronics; (1992) https://doi.org/10.1117/12.137719
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

A discrete peeled high electron mobility transistor (HEMT) device was integrated into a 10 GHz amplifier. The discrete HEMT device interconnects were made using photo patterned metal, stepping from the 10 mil alumina host substrate onto the 1.3 micrometers thick peeled GaAs HEMT layer, eliminating the need for bond wires and creating a fully integrated circuit. Testing of device indicate that the peeled device is not degraded by the peel off step but rather there is an improvement in the quantum well carrier confinement. Circuit testing resulted in a maximum gain of 8.5 dB and a return loss minimum of -12 dB.

Citation Download Citation

Paul G. Young, Robert R. Romanofsky, Samuel A. Alterovitz, and Edwyn D. Smith "X-band "peeled" HEMT amplifier", Proc. SPIE 1680, High-Speed Electronics and Optoelectronics, (3 September 1992); https://doi.org/10.1117/12.137719

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