Characterization of electron cyclotron resonance plasmas for diamond deposition

Shu Jin; Richard Molnar; Donald Y. Jong; Theodore D. Moustakas

doi:10.1117/12.130760

20 November 1992 Characterization of electron cyclotron resonance plasmas for diamond deposition

Shu Jin, Richard Molnar, Donald Y. Jong, Theodore D. Moustakas

Proceedings Volume 1759, Diamond Optics V; (1992) https://doi.org/10.1117/12.130760
Event: San Diego '92, 1992, San Diego, CA, United States

Abstract

Langmuir probe measurements and optical emission spectroscopy were employed to characterize electron cyclotron resonance plasmas with two different magnetic field configurations. The plasma ternperature was directly measured by a thermocouple immersed inside the plasmas. To deposit diamond at low pressure( lOOmTorr) it is required for the feed sources to contain a large amount of carbon as well as OH radicals. However, the C, H, and 0 ratios still fall into the "diamond domain" of Bachmann's diagram. The oxygen addition to the CHiJH2 plasma leads to the improvement of diamond films prepared at 800mTorr, which is due to the OH radicals formed in the plasma. The addition of oxygen does not increase the plasma temperature. Our results of ECR diamond deposition under various pressures support that neutral-neutral reactions dominate in diamond growth process.

Citation Download Citation

Shu Jin, Richard Molnar, Donald Y. Jong, and Theodore D. Moustakas "Characterization of electron cyclotron resonance plasmas for diamond deposition", Proc. SPIE 1759, Diamond Optics V, (20 November 1992); https://doi.org/10.1117/12.130760

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