Monte Carlo simulation of AlGaAs/GaAs HBTs with different collector structure

G. Khrenov; Victor Ryzhii; S. Kartashov

doi:10.1117/12.131004

1 August 1992 Monte Carlo simulation of AlGaAs/GaAs HBTs with different collector structure

G. Khrenov, Victor Ryzhii, S. Kartashov

Proceedings Volume 1783, International Conference of Microelectronics: Microelectronics '92; (1992) https://doi.org/10.1117/12.131004
Event: International Conference on Microelectronics, 1992, Warsaw, Poland

Abstract

High-frequency performances of AlGaAs/GaAs heterostructure bipolar transistors (HBT) were evaluated under different operating conditions. Both HBT with conventional-doped collectors and HBT with selectively doped collectors have been investigated and compared.

Citation Download Citation

G. Khrenov, Victor Ryzhii, and S. Kartashov "Monte Carlo simulation of AlGaAs/GaAs HBTs with different collector structure", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); https://doi.org/10.1117/12.131004

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