Low-threshold visible laser diodes for high-power applications

Harvey B. Serreze

doi:10.1117/12.141112

16 February 1993 Low-threshold visible laser diodes for high-power applications

Harvey B. Serreze

Proceedings Volume 1788, Sources and Detectors for Fiber Communications; (1993) https://doi.org/10.1117/12.141112
Event: Fibers '92, 1992, Boston, MA, United States

Abstract

High performance, AlGaInP, strained-layer single quantum well, semiconductor laser diodes emitting in the 630 to 680 nm spectral range have been designed, fabricated, and characterized. Thermal calculations and modelling have been carried out both to estimate the thermal resistivity of various AlGaInP alloys and to optimize the device geometry and performance. Threshold current densities below 300 A/cm² at room temperature, cw outputs over 1 Watt, and operating lifetimes in excess of 10,000 hours have been achieved.

Citation Download Citation

Harvey B. Serreze "Low-threshold visible laser diodes for high-power applications", Proc. SPIE 1788, Sources and Detectors for Fiber Communications, (16 February 1993); https://doi.org/10.1117/12.141112

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available