Effects of hot light holes in n-channel silicon-on-sapphire MOSFETs

Emil Yu-ming Chao; Guann-pyng Li

doi:10.1117/12.139353

14 January 1993 Effects of hot light holes in n-channel silicon-on-sapphire MOSFETs

Emil Yu-ming Chao, Guann-pyng Li

Proceedings Volume 1802, Microelectronics Manufacturing and Reliability; (1993) https://doi.org/10.1117/12.139353
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

Silicon on sapphire (SOS) MOSFETs are light hole devices. Hot carrier induced degradation of SOS FETs are found to correlate with both substrate and gate currents. DC stressing experiments show that the effects of hot light holes are mainly charge trapping, and cause very little interface state generation. At gate biases that give rise to mixed carrier stressing, interface states are created in significant quantities. Mechanisms of hot carrier degradation in light hole devices are found to be consistent with those proposed for bulk silicon devices.

Citation Download Citation

Emil Yu-ming Chao and Guann-pyng Li "Effects of hot light holes in n-channel silicon-on-sapphire MOSFETs", Proc. SPIE 1802, Microelectronics Manufacturing and Reliability, (14 January 1993); https://doi.org/10.1117/12.139353

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