Annealing effects on heavily C-doped GaAs and InGaAs films

Weiyu Han; L. Calderon; Yu Cun Lu; H. S. Lee; S. N. Schauer; Robert P. Moerkirk; Kenneth A. Jones; Li-Wu Yang

doi:10.1117/12.142933

16 April 1993 Annealing effects on heavily C-doped GaAs and InGaAs films

Weiyu Han, L. Calderon, Yu Cun Lu, H. S. Lee, S. N. Schauer, Robert P. Moerkirk, Kenneth A. Jones, Li-Wu Yang

Proceedings Volume 1803, Advanced Techniques for Integrated Circuit Processing II; (1993) https://doi.org/10.1117/12.142933
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

The hole carrier concentration of heavily carbon doped GaAs epilayers (4.7 X 10¹⁹ and 9.8 X 10¹⁹ cm^-3) was increased and the mobility and lattice parameter were decreased by rapid thermal annealing silicon nitride capped samples at temperatures from 500 to 900 degree(s)C. For the more heavily doped sample, the hole concentration, mobility, and lattice mismatch decreased with increasing annealing temperature for annealing temperatures higher than 700 degree(s)C, but the hole concentration and mismatch were still larger than those of the as grown samples. Two heavily carbon doped InGaAs samples (2.35 X 10¹⁹ cm^-3 and 2.05 X 10¹⁹) with low In mole fractions (1% and 8%) were furnace annealed with or without silicon nitride caps in H₂ containing 0.3% AsH₃ over the temperature range 500 - 800 degree(s)C. The changes observed for the capped samples were similar to those observed for the RTA annealed GaAs films, but for the uncapped samples the changes in the carrier concentration, mobility, and lattice parameter were for the most part much smaller. The only exception is the large increase in the lattice parameter at the highest annealing temperatures in the films containing 1% In. SIMS results showed that annealing produced no change in the C concentration or distribution, but the hydrogen concentration decreased in all samples except the uncapped films annealed in AsH₃. We attribute the low temperature (<EQ 700 degree(s)C) results in all but the uncapped samples annealed in AsH₃ to the removal of hydrogen which had passivated the carbon acceptor.

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Weiyu Han, L. Calderon, Yu Cun Lu, H. S. Lee, S. N. Schauer, Robert P. Moerkirk, Kenneth A. Jones, and Li-Wu Yang "Annealing effects on heavily C-doped GaAs and InGaAs films", Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); https://doi.org/10.1117/12.142933

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KEYWORDS

Annealing

Gallium arsenide

Indium gallium arsenide

Carbon

Temperature metrology

Silicon

Hydrogen

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