Interpretation of current-induced noise for detection of ULSI/VLSI interconnection reliability problems

James G. Cottle Jr.

doi:10.1117/12.145452

21 May 1993 Interpretation of current-induced noise for detection of ULSI/VLSI interconnection reliability problems

James G. Cottle Jr.

Proceedings Volume 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations; (1993) https://doi.org/10.1117/12.145452
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

This paper summarizes several different types of current induced (excess) noise time domain waveforms and the power spectra behavior associated with specific ULSI/VLSI interconnection problems. Importance of maintaining waveform stationarity when using 1/f² noise to detect electromigration is illustrated. In addition, non-stationary waveforms, associated with thin films with high degrees of stress are reported. A discussion of large magnitude 1/f spectra associated with the presence of film voids, poor step coverage and/or wire bonding problems is presented.

Citation Download Citation

James G. Cottle Jr. "Interpretation of current-induced noise for detection of ULSI/VLSI interconnection reliability problems", Proc. SPIE 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations, (21 May 1993); https://doi.org/10.1117/12.145452

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