Paper
23 October 1992 AlGaInP green light-emitting diode
Tzer-Perng Chen, C. Y. Chen, J. K. Hsu, J. R. Deng, M. J. Jou, Chuan-Ming Chang, J. Y. Kao, Biing-Jye Lee, Su-Hui Hsu
Author Affiliations +
Proceedings Volume 1813, Optoelectronic Component Technologies; (1992) https://doi.org/10.1117/12.131244
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan
Abstract
The structures and performances of surface emitting AlGaInP green light emitting diodes (LEDs) with emission wavelength around 565 nm were studied. The AlGaInP green LEDs with epitaxial structure grown on P-type GaAs substrate showed the best performance. This is the first paper ever reported for the fabrication of AlGaInP LEDs using P-type GaAs as a substrate. In AlGaInP LED structure using P-type GaAs substrate, the highly conductive n- type AlInP was consequently used as a top confining layer and the current crowding problem was significantly improved. Therefore, the green electroluminescence (EL) was uniformly emitted from the surface of LED dice.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tzer-Perng Chen, C. Y. Chen, J. K. Hsu, J. R. Deng, M. J. Jou, Chuan-Ming Chang, J. Y. Kao, Biing-Jye Lee, and Su-Hui Hsu "AlGaInP green light-emitting diode", Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); https://doi.org/10.1117/12.131244
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KEYWORDS
Light emitting diodes

Gallium arsenide

Green light emitting diodes

Metals

Electroluminescence

Aluminium gallium indium phosphide

Indium gallium phosphide

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