Exposure and resist-process condition dependence of replicated-pattern accuracy in SR lithography

M. Morigami; T. Tanaka; Takeo Watanabe; Yoshio Yamashita; Shuji Fujiwara; Junichi Nishino; M. Harada; Y. Yamaoka; R. Yuasa; M. Inai; S. Suzuki

doi:10.1117/12.146511

24 June 1993 Exposure and resist-process condition dependence of replicated-pattern accuracy in SR lithography

M. Morigami, T. Tanaka, Takeo Watanabe, Yoshio Yamashita, Shuji Fujiwara, Junichi Nishino, M. Harada, Y. Yamaoka, R. Yuasa, M. Inai, S. Suzuki

Author Affiliations +

Proceedings Volume 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III; (1993) https://doi.org/10.1117/12.146511
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

Replicated pattern accuracy was investigated in synchrotron radiation (SR) lithography, using a chemically amplified (CA) negative-type resist and a highly accurate x-ray mask delineated by focused ion beams (FIB). The size of the hole resist pattern which is arranged in a lattice is affected by the proximity gap and the pattern pitch, but that of the dot resist pattern is hardly dependent on these variables. The dot resist pattern, which was replicated with the 0.25- micrometers -square hole mask pattern, became circular with a proximity gap of over 20 micrometers . In order to obtain highly accurate pattern shape as well as pattern size, the proximity gap should be less than 20 micrometers . The resist pattern size and shape depend on the exposure dose. This was confirmed through the simulation of Fresnel diffraction. The resist pattern was influenced considerably by the post-exposure baking (PEB) conditions, temperature and time. The PEB condition dependence of a replicated pattern was investigated. It is effective to extend the PEB time to improve the sensitivity without deforming the pattern shape.

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M. Morigami, T. Tanaka, Takeo Watanabe, Yoshio Yamashita, Shuji Fujiwara, Junichi Nishino, M. Harada, Y. Yamaoka, R. Yuasa, M. Inai, and S. Suzuki "Exposure and resist-process condition dependence of replicated-pattern accuracy in SR lithography", Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); https://doi.org/10.1117/12.146511

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