Paper
24 June 1993 Performance of the Hampshire Instruments Model 5000 proximity x-ray stepper
John Frackoviak, George K. Celler, Charles W. Jurgensen, R. R. Kola, Anthony E. Novembre, Lee E. Trimble, David N. Tomes
Author Affiliations +
Abstract
The Hampshire Instruments Model 5000 Stepper is a commercially available laser based 1:1 proximity x-ray stepper. The source of this system is a 25 watt Nd:glass slab laser which is focused to approximately 200 micrometers diameter spot on an iron alloy tape target. Nanosecond pulses fired at a 2 Hz burst (1 Hz average) repetition rate produce slightly more than 1 mJ/cm2 of x-ray flux per pulse at the wafer plane. This flux of soft x-ray has a spectrum of 8 - 20 angstroms centered on the 14 angstroms band. This is the first system shipped by Hampshire Instruments. It is a research and development tool which is not meant for the production line, but rather as a means to investigate issues associated with x-ray lithography and inserting a system of this type into a manufacturing environment. This paper will present final acceptance test results for system resolution, critical dimension control and registration, as well as data showing system performance for the first five months of operation. Results showing 0.2 micrometers line and space resolution across a 14.7 mm field in 1.0 micrometers thick resist printed using a tungsten absorber mask will be presented. Registration test results show a variation of 0.13 micrometers (3 (sigma) ) across a five wafer lot. When the alignment system was slowed down, however, a result of 0.09 micrometers was achieved. Metrology issues dealing with critical dimension control as they pertain to this stepper will be addressed.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John Frackoviak, George K. Celler, Charles W. Jurgensen, R. R. Kola, Anthony E. Novembre, Lee E. Trimble, and David N. Tomes "Performance of the Hampshire Instruments Model 5000 proximity x-ray stepper", Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); https://doi.org/10.1117/12.146508
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Cited by 1 scholarly publication.
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KEYWORDS
Semiconducting wafers

X-rays

Photomasks

Control systems

Critical dimension metrology

Instrument modeling

Optical alignment

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