Paper
24 June 1993 Properties of thin SiC membrane for x-ray mask
Tsutomu Shoki, Hiroyuki Nagasawa, Hiroyuki Kosuga, Yoichi Yamaguchi, Noromichi Annaka, Isao Amemiya, Osamu Nagarekawa
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Abstract
We have investigated the effects of film thickness, anti-reflective (AR) coating and surface roughness on the optical transparency of silicon carbide (SiC) membrane. Peak transmittances monotonously increased as the thickness decreased. The transmittance at 633 nm for 1.05 micrometers thick SiC membrane adjusted by reactive ion etching was 70%, and increased up to 80% by an AR coating. SiC membrane with extremely smooth surface of 0.12 nm (Ra) has been obtained by polishing, and had peak transmittances of 69% and 80% at 633 nm for 2.0 micrometers and 1.0 micrometers in thickness, respectively. Poly-crystalline (beta) -SiC membrane in the suitable tensile stress range of 0.3 to 2.0 X 108 Pa and with high Young's modulus of 4.5 X 1011 Pa has been prepared by a hot wall type low pressure chemical vapor deposition, and been found to need to have thickness over 0.7 micrometers to maintain sufficient mechanical strength in processing.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tsutomu Shoki, Hiroyuki Nagasawa, Hiroyuki Kosuga, Yoichi Yamaguchi, Noromichi Annaka, Isao Amemiya, and Osamu Nagarekawa "Properties of thin SiC membrane for x-ray mask", Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); https://doi.org/10.1117/12.146526
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KEYWORDS
Silicon carbide

Transmittance

Protactinium

Radium

X-rays

Polishing

Reactive ion etching

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