Film thickness measurement of amorphous silicon

Wayne D. Clark; Mark E. Keefer; Dawn-Marie Cook

doi:10.1117/12.148976

4 August 1993 Film thickness measurement of amorphous silicon

Wayne D. Clark, Mark E. Keefer, Dawn-Marie Cook

Proceedings Volume 1926, Integrated Circuit Metrology, Inspection, and Process Control VII; (1993) https://doi.org/10.1117/12.148976
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

Amorphous silicon has been used extensively in electro-optical applications. Its use as a gate electrode material for advanced CMOS devices is currently being developed, as it offers certain desirable characteristics compared to the commonly used polycrystalline silicon. We have studied a series of amorphous silicon films deposited at varying temperatures. The deposition temperature ranged from 540 degree(s)C to 570 degree(s)C. The nominal thickness was approximately 1575 angstroms to 3170 angstroms. Due to the differences in deposition temperature, one would expect the optical properties to vary slightly. Using software that allows analysis of the spectral information, the dispersion was examined for each sample. With this knowledge, the film thicknesses could be reliably measured.

Citation Download Citation

Wayne D. Clark, Mark E. Keefer, and Dawn-Marie Cook "Film thickness measurement of amorphous silicon", Proc. SPIE 1926, Integrated Circuit Metrology, Inspection, and Process Control VII, (4 August 1993); https://doi.org/10.1117/12.148976

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