NA and <sigma> optimization for high-NA i-line lithography

Koji Yamanaka; Haruo Iwasaki; Hiroshi Nozue; Kunihiko Kasama

doi:10.1117/12.150435

8 August 1993 NA and Σ optimization for high-NA i-line lithography

Koji Yamanaka, Haruo Iwasaki, Hiroshi Nozue, Kunihiko Kasama

Proceedings Volume 1927, Optical/Laser Microlithography; (1993) https://doi.org/10.1117/12.150435
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

NA and (sigma) will be optimized to establish 0.35 micrometers i-line single layer resist process without use of super resolution techniques. Resolution, depth of focus (DOF), and proximity effect are evaluated using a variable NA and (sigma) stepper. NA is varied by an aperture stop in a projection lens. (sigma) is varied by not only an aperture stop (mechanical (sigma) ) in an illumination optics but also intensity distribution of illumination at the aperture stop (effective (sigma) ). Optimized NA and (sigma) are applied to a newly developed high resolution resist. Obtained results show that high NA and high (sigma) stepper has a great availability for 0.35 micrometers device fabrication.

Citation Download Citation

Koji Yamanaka, Haruo Iwasaki, Hiroshi Nozue, and Kunihiko Kasama "NA and Σ optimization for high-NA i-line lithography", Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); https://doi.org/10.1117/12.150435

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