Demonstration of low-power nonlinearity in InGaAs/InP multiple-quantum-well waveguides

Domenico Campi; C. Cacciatore; Claudio Coriasso; Cesare F. Rigo; Heinz-Christoph Neitzert

doi:10.1117/12.162755

19 November 1993 Demonstration of low-power nonlinearity in InGaAs/InP multiple-quantum-well waveguides

Domenico Campi, C. Cacciatore, Claudio Coriasso, Cesare F. Rigo, Heinz-Christoph Neitzert

Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162755
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy

Abstract

We report both linear and nonlinear grating coupling to a planar multiple quantum well (MQW) waveguide grown by chemical beam epitaxy. We demonstrate a strong dependence of the coupling angle on the incident power in the wavelength range (lambda) equals 1.57 - 1.60 micrometers . The obtained nonlinear variation of n_eff were found to be negative, and on the order of 10^-3, in agreement with many-body calculations performed by the authors. We show that thermal effects can be ruled out. At coupled light intensity as low as 40 mW, nonlinear switching condition was achieved; the power density to obtain the switching process is substantially lower than in previous works. As part of this work, we report the systematic investigation of the linear and nonlinear absorption properties of several InGaAs/InP MQW structures, measuring a series of transmission spectra in the region of the band edge for various pump intensities and observing large changes in the absorption coefficient. Through comparison with these results, we speculate that the mechanism responsible for the refractive nonlinearity observed in the waveguide is consistent with purely excitonic effects.

Citation Download Citation

Domenico Campi, C. Cacciatore, Claudio Coriasso, Cesare F. Rigo, and Heinz-Christoph Neitzert "Demonstration of low-power nonlinearity in InGaAs/InP multiple-quantum-well waveguides", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162755

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