Effect of defects due to lattice mismatch between GaAs and InP materials on gate-leakage current and microwave noise of GaAs MESFETS on InP substrates

Mourad Chertouk; A. Boudiaf; Rozette Azoulay; A. Clei

doi:10.1117/12.162759

19 November 1993 Effect of defects due to lattice mismatch between GaAs and InP materials on gate-leakage current and microwave noise of GaAs MESFETS on InP substrates

Mourad Chertouk, A. Boudiaf, Rozette Azoulay, A. Clei

Author Affiliations +

Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162759
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy

Abstract

The effect of traps due to lattice mismatch between GaAs and InP materials on the reverse current of Schottky diodes is demonstrated by the temperature dependence of the current, which exhibits a S.R.H. component at low reverse bias (also present in GaAs/GaAs with activation energy 0.125 eV) and a trap assisted tunneling one at high reverse bias (not observed in GaAs/GaAs). A model is developed which takes into account the temperature and channel doping level dependence. Application of this model to 0.25 micrometers gate GaAs MESFETs gives a good agreement with gate leakage current behavior as a function of drain and gate bias, for 6 X 10¹⁷ cm^-3 and 10¹⁸ cm^-3 channel doping. The excess gate-drain assisted tunneling current in 10¹⁸ cm^-3 doped channel does not affect the MESFETs dc and microwave performances. However, the microwave noise (Fmin) is increased.

Citation Download Citation

Mourad Chertouk, A. Boudiaf, Rozette Azoulay, and A. Clei "Effect of defects due to lattice mismatch between GaAs and InP materials on gate-leakage current and microwave noise of GaAs MESFETS on InP substrates", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162759

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