Far infrared and Raman study of the effect of growth on the interfaces of a symmetric GaAs/AlAs superlattices

A. Z. Mamun

doi:10.1117/12.2298594

30 August 1993 Far infrared and Raman study of the effect of growth on the interfaces of a symmetric GaAs/AlAs superlattices

A. Z. Mamun

Author Affiliations +

Proceedings Volume 2104, 18th International Conference on Infrared and Millimeter Waves; 21044I (1993) https://doi.org/10.1117/12.2298594
Event: 18th International Conference on Infrared and Millimeter Waves, 1993, Colchester, United Kingdom

Abstract

Phonon confinement in a selection of asymmetric 4-layer GaAs/AlAs superlattice structures grown by molec- ular beam epitaxy has been studied by polarised far infrared oblique incidence and attenuated total reflection(ATR) spectroscopy and Raman spectroscopy. The results enable measurements to he made of the interfacebroadening parameters WE of each interface i. The interface roughness parameter W of a layer of averagethickness n monolayers is described by the expression W2 = ann3 /(an + n,), with a = 1 and n3 = 2 and 5for GaAs and AlAs repectively.

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A. Z. Mamun "Far infrared and Raman study of the effect of growth on the interfaces of a symmetric GaAs/AlAs superlattices", Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 21044I (30 August 1993); https://doi.org/10.1117/12.2298594

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