Paper
30 November 2017 Far infrared spectroscopy of phonons and plasmons in semiconductor superlattices
T. Dumelow
Author Affiliations +
Proceedings Volume 2104, 18th International Conference on Infrared and Millimeter Waves; 210470 (2017) https://doi.org/10.1117/12.2298684
Event: 18th International Conference on Infrared and Millimeter Waves, 1993, Colchester, United Kingdom
Abstract
The overall symmetry of both long and short period superlattices is uniaxial, with principal axes, z, parallel,and x and y, normal to the growth direction. Far infrared spectroscopy is a powerful technique for investigatingboth components, ezz and exx = Eyy, of the dielectric function of these structures. In this paper we shall reviewthese techniques and present examples of how they can be used to characterise semiconductor superlattices.Because of the strong absorption due to the phonon modes in superlattices fabricated from compoundsemiconductors, transmission measurements require thinning of the substrate to a few microns in thickness. Thisis difficult to achieve, as well as being destructive, so in all our work reflection spectroscopy is used.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Dumelow "Far infrared spectroscopy of phonons and plasmons in semiconductor superlattices", Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 210470 (30 November 2017); https://doi.org/10.1117/12.2298684
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KEYWORDS
Superlattices

Phonons

Spectroscopy

Far infrared

Reflectance spectroscopy

Reflection

Interfaces

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