Metallorganic vapor phase epitaxy growth of ZnSe1-xTex on (111) and (001) GaAs substrates

Harald Stanzl; A. Rosenauer; Klaus H. Wolf; Marcus Kastner; Berthold Hahn; W. Gebhardt

doi:10.1117/12.175786

11 May 1994 Metallorganic vapor phase epitaxy (MOVPE) growth of ZnSe_1-xTe_x on (111) and (001) GaAs substrates

Harald Stanzl, A. Rosenauer, Klaus H. Wolf, Marcus Kastner, Berthold Hahn, W. Gebhardt

Proceedings Volume 2140, Epitaxial Growth Processes; (1994) https://doi.org/10.1117/12.175786
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

ZnSe_1-xTe_x layers were grown by MOVPE on (111) and (001) GaAs substrates at 340 degree(s)C. The growth process of the ternary compound is described by a thermodynamical analysis. The structural quality of the films was determined by x-ray diffraction and transmission electron microscopy. In the present work it is shown that in the case of (001) GaAs substrates the density of misfit dislocation lines extending into the epilayer is reduced drastically by improved oxide removal. For ZnTe/GaAs (111) misfit dislocations can spatially be confined to a narrow (approximately 10 nm) region close to the interface.

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Harald Stanzl, A. Rosenauer, Klaus H. Wolf, Marcus Kastner, Berthold Hahn, and W. Gebhardt "Metallorganic vapor phase epitaxy (MOVPE) growth of ZnSe_1-xTe_x on (111) and (001) GaAs substrates", Proc. SPIE 2140, Epitaxial Growth Processes, (11 May 1994); https://doi.org/10.1117/12.175786

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