High-Tc trilayer tunneling and Josephson junction structures made using atomic layer-by-layer growth

J. N. Eckstein; Ivan Bozovic; Gary F. Virshup

doi:10.1117/12.179157

29 June 1994 High-T_c trilayer tunneling and Josephson junction structures made using atomic layer-by-layer growth

J. N. Eckstein, Ivan Bozovic, Gary F. Virshup

Proceedings Volume 2157, Superconducting Superlattices and Multilayers; (1994) https://doi.org/10.1117/12.179157
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Very precise artificial structuring of high T_c heterostructures is possible using atomic layer-by-layer molecular beam epitaxy. Cuprates are combined with other oxides, such as titanates, to make atomically precise heterostructures for studying transport and interfacial effects. Titanate slabs as thin as one unit cell thick can be grown without pinholes and provide tunneling barriers for c-axis transport. Single doped unit cells of BSCCO-2212 can also be used as barriers. These give SNS Josephson junctions at temperatures as high as 65 K. Since the crystallographic structure of the barrier is identical to the structure of the 2212 electrode material, it is easily possible to stack more than one junction in close proximity. This results in phase-locked operation of two junctions together.

Citation Download Citation

J. N. Eckstein, Ivan Bozovic, and Gary F. Virshup "High-T_c trilayer tunneling and Josephson junction structures made using atomic layer-by-layer growth", Proc. SPIE 2157, Superconducting Superlattices and Multilayers, (29 June 1994); https://doi.org/10.1117/12.179157

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