10 August 1994Microanalytical study of defect formation in thin bismuth strontium calcium copper oxide films
Richard H. Howell, Alison Chaiken, Ronald G. Musket, Mark A. Wall, Mehdi Balooch, D. Phinney, Michael J. Fluss, J. N. Eckstein, Ivan Bozovic, Gary F. Virshup
Richard H. Howell,1 Alison Chaiken,1 Ronald G. Musket,1 Mark A. Wall,1 Mehdi Balooch,1 D. Phinney,1 Michael J. Fluss,1 J. N. Eckstein,2 Ivan Bozovic,2 Gary F. Virshup2
1Lawrence Livermore National Lab. (United States) 2E.H. Ginzton Research Ctr., Varian Associates Inc. (United States)
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Thin bismuth strontium calcium copper oxide (BSCCO) films and BSCCO/insulator/BSCCO trilayers have been prepared on SrTiO3 and MgO substrates by evaporation from elemental sources in ozone atmosphere. Accurate control of the stoichiometry is achieved through monitoring of the atomic fluxes by use of in situ atomic absorption spectroscopy, as well as by reflection high-energy electron diffraction. Nevertheless, nanometer-scale second- phase precipitates are sometimes observed. These defects and the flat regions around them have been probed by a variety of microanalytical techniques, including Rutherford backscattering spectroscopy, particle-induced x-ray emission, atomic force microscopy, microscopic secondary ion mass spectroscopy and transmission electron microscopy.
Richard H. Howell,Alison Chaiken,Ronald G. Musket,Mark A. Wall,Mehdi Balooch,D. Phinney,Michael J. Fluss,J. N. Eckstein,Ivan Bozovic, andGary F. Virshup
"Microanalytical study of defect formation in thin bismuth strontium calcium copper oxide films", Proc. SPIE 2158, Oxide Superconductor Physics and Nano-Engineering, (10 August 1994); https://doi.org/10.1117/12.182681
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Richard H. Howell, Alison Chaiken, Ronald G. Musket, Mark A. Wall, Mehdi Balooch, D. Phinney, Michael J. Fluss, J. N. Eckstein, Ivan Bozovic, Gary F. Virshup, "Microanalytical study of defect formation in thin bismuth strontium calcium copper oxide films," Proc. SPIE 2158, Oxide Superconductor Physics and Nano-Engineering, (10 August 1994); https://doi.org/10.1117/12.182681