Quantitive analysis of the proximity effect in optical lithographic process

Sang-Man Bae; Hung-Eil Kim; Young-Mog Ham; Seung-Chan Moon; Soo-Han Choi

doi:10.1117/12.174128

1 May 1994 Quantitive analysis of the proximity effect in optical lithographic process

Sang-Man Bae, Hung-Eil Kim, Young-Mog Ham, Seung-Chan Moon, Soo-Han Choi

Proceedings Volume 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII; (1994) https://doi.org/10.1117/12.174128
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

As the density of VLSI circuits increases, the proximity effect has been one of the critical issues in optical lithography. In general, the linewidth difference between dense and isolated patterns corresponds to 0.08 micrometers when a conventional i-line single resist process using a 0.54 NA is applied to the half-micron geometry on a flat wafer. Therefore, this linewidth difference has significantly affected the process stability in the real process applications. This paper describes the dependency of the proximity effects on the pattern size, line and space duty ratio, kinds of substrate film, defocus effect during exposure, and resist process conditions related to the variation of the resist thickness and develop time. Critical dimension (CD) deviation caused by the different latent image contrast is also experimentally monitored using two different photoresists. A simulation is performed for the purpose of obtaining the optimum resist thickness to reduce CD difference caused by the variations of resist thickness in the real topography.

Citation Download Citation

Sang-Man Bae, Hung-Eil Kim, Young-Mog Ham, Seung-Chan Moon, and Soo-Han Choi "Quantitive analysis of the proximity effect in optical lithographic process", Proc. SPIE 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII, (1 May 1994); https://doi.org/10.1117/12.174128

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